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Nanoscale depth-resolved electronic properties of for device-tolerant electronics
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10.1116/1.3543712
/content/avs/journal/jvstb/29/1/10.1116/1.3543712
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3543712
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Monte Carlo simulations of 200 nm with corresponding CLS probe electron energies and depths.

Image of FIG. 2.
FIG. 2.

(Color online) Monte Carlo simulations of 58 nm with corresponding CLS probe energies and depths. Inset shows schematic of 58 nm dielectric stack.

Image of FIG. 3.
FIG. 3.

(Color online) Near-visible to visible DRCLS optical emission spectra of (a) thermal , (b) PECVD , (c) PECVD and (d) deconvolved 2 keV PECVD .

Image of FIG. 4.
FIG. 4.

(Color online) Near visible to visible DRCLS optical emission spectra of the (a) as-deposited and (b) annealed dielectric stacks.

Image of FIG. 5.
FIG. 5.

(Color online) Depth profile of the and defects with respect to the defect in the dielectric stack.

Image of FIG. 6.
FIG. 6.

(Color online) IR DRCLS spectra of the (a) unprocessed and (b) annealed dielectric stacks.

Image of FIG. 7.
FIG. 7.

(Color online) SE features for nc-Si and noncrystalline Si clusters versus irradiation. The 4.77–4.88 eV SE features are due to states 3.77–3.88 eV below the conduction band. Irradiation has no effect on the as-deposited noncrystalline Si cluster , while it shifts the 3.88 eV feature to 3.93 eV for the nc-Si. Reprinted from Ref. 3 with permission.

Image of FIG. 8.
FIG. 8.

(Color online) Schematic illustrating the SE and DRCLS optical transitions relative to the energy bands of , Si, and the trap state. SE and DRCLS both show the trap state above the Si valence band.

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/content/avs/journal/jvstb/29/1/10.1116/1.3543712
2011-01-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3543712
10.1116/1.3543712
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