Nanoscale depth-resolved electronic properties of for device-tolerant electronics
(Color online) Monte Carlo simulations of 200 nm with corresponding CLS probe electron energies and depths.
(Color online) Monte Carlo simulations of 58 nm with corresponding CLS probe energies and depths. Inset shows schematic of 58 nm dielectric stack.
(Color online) Near-visible to visible DRCLS optical emission spectra of (a) thermal , (b) PECVD , (c) PECVD and (d) deconvolved 2 keV PECVD .
(Color online) Near visible to visible DRCLS optical emission spectra of the (a) as-deposited and (b) annealed dielectric stacks.
(Color online) Depth profile of the and defects with respect to the defect in the dielectric stack.
(Color online) IR DRCLS spectra of the (a) unprocessed and (b) annealed dielectric stacks.
(Color online) SE features for nc-Si and noncrystalline Si clusters versus irradiation. The 4.77–4.88 eV SE features are due to states 3.77–3.88 eV below the conduction band. Irradiation has no effect on the as-deposited noncrystalline Si cluster , while it shifts the 3.88 eV feature to 3.93 eV for the nc-Si. Reprinted from Ref. 3 with permission.
(Color online) Schematic illustrating the SE and DRCLS optical transitions relative to the energy bands of , Si, and the trap state. SE and DRCLS both show the trap state above the Si valence band.
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