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Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures
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10.1116/1.3545811
/content/avs/journal/jvstb/29/2/10.1116/1.3545811
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3545811
/content/avs/journal/jvstb/29/2/10.1116/1.3545811
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/content/avs/journal/jvstb/29/2/10.1116/1.3545811
2011-01-21
2014-09-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3545811
10.1116/1.3545811
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