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High-aspect-ratio inductively coupled plasma etching of InP using : Avoiding the effect of electrode coverplate material
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10.1116/1.3546024
/content/avs/journal/jvstb/29/2/10.1116/1.3546024
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3546024
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) InP etch rate as a function of ratio for three different chemistries: plasma assisted by c-Si wafer (squares), with wafer (circles), and with wafer (triangles). The plain and dashed arrows on the top horizontal axis indicate the center of anisotropic window for the and the , respectively. [(b)–(d)] SEM images of the etching profile in pure plasma and c-Si wafer (b), in pure plasma with wafer (c), and in plasma with wafer wafer (d).

Image of FIG. 2.
FIG. 2.

SEM images of InP ridge etched in different chemistries. [(a)–(c)] , [(d)–(f)] , and [(g)–(i)] . Three different wafers have been used: [(a), (d), and (g)] wafer, [(b), (e), and (h)] wafer, and [(c), (f), and (i)] carbon-coated wafer.

Image of FIG. 3.
FIG. 3.

(a) SEM image of micropillars etched in plasma with wafer and (b) TEM image of the micropillar sidewall.

Image of FIG. 4.
FIG. 4.

(a) SEM image of micropillars etched in plasma with wafer, (b) TEM image of the micropillar sidewall, and (c) closer TEM view of (b)—one can see the nanocrystalline structure of the Si passivation layer.

Image of FIG. 5.
FIG. 5.

SEM images of bulk InP (a), InP/InGaAlAs (b), and InP/InGaAs (c) ridge profiles etched in chemistry with wafer.

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/content/avs/journal/jvstb/29/2/10.1116/1.3546024
2011-01-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3546024
10.1116/1.3546024
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