(Color online) (a) InP etch rate as a function of ratio for three different chemistries: plasma assisted by c-Si wafer (squares), with wafer (circles), and with wafer (triangles). The plain and dashed arrows on the top horizontal axis indicate the center of anisotropic window for the and the , respectively. [(b)–(d)] SEM images of the etching profile in pure plasma and c-Si wafer (b), in pure plasma with wafer (c), and in plasma with wafer wafer (d).
SEM images of InP ridge etched in different chemistries. [(a)–(c)] , [(d)–(f)] , and [(g)–(i)] . Three different wafers have been used: [(a), (d), and (g)] wafer, [(b), (e), and (h)] wafer, and [(c), (f), and (i)] carbon-coated wafer.
(a) SEM image of micropillars etched in plasma with wafer and (b) TEM image of the micropillar sidewall.
(a) SEM image of micropillars etched in plasma with wafer, (b) TEM image of the micropillar sidewall, and (c) closer TEM view of (b)—one can see the nanocrystalline structure of the Si passivation layer.
SEM images of bulk InP (a), InP/InGaAlAs (b), and InP/InGaAs (c) ridge profiles etched in chemistry with wafer.
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