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Photocapacitance spectroscopy study of deep-level defects in freestanding -GaN substrates using transparent conductive polymer Schottky contacts
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10.1116/1.3549883
/content/avs/journal/jvstb/29/2/10.1116/1.3549883
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3549883
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room-temperature characteristics of PANI/-GaN SBDs in (a) semilogarithmic and (b) normal scales.

Image of FIG. 2.
FIG. 2.

Room-temperature characteristics measured at 1 kHz of PANI/-GaN SBDs.

Image of FIG. 3.
FIG. 3.

Room-temperature SSPC spectra measured at of −8 V of PANI/-GaN SBDs.

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/content/avs/journal/jvstb/29/2/10.1116/1.3549883
2011-01-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3549883
10.1116/1.3549883
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