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Photocapacitance spectroscopy study of deep-level defects in freestanding -GaN substrates using transparent conductive polymer Schottky contacts
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10.1116/1.3549883
/content/avs/journal/jvstb/29/2/10.1116/1.3549883
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3549883
/content/avs/journal/jvstb/29/2/10.1116/1.3549883
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/content/avs/journal/jvstb/29/2/10.1116/1.3549883
2011-01-26
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/2/10.1116/1.3549883
10.1116/1.3549883
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