(Color online) Schematic of the amorphous indium-tin-zinc oxide thin-film transistor.
(Color online) Dependence of the electrical conductivity of ITZO films on the oxygen partial pressure at the working pressure of 10 mTorr during the sputtering.
(Color online) X-ray diffraction patterns of ITZO films deposited with ratio of 50:1 as a function of postannealing temperature.
(Color online) Carrier concentration and Hall mobility of ITZO films deposited with ratio of 50:1 as a function of postannealing temperature.
(Color online) Optical transmittance spectra of the ITZO films deposited with ratio of 50:1 at room temperature and then annealed at . The inset is the plot of vs .
(Color online) (a) Drain current–drain voltage characteristics and (b) the corresponding drain current–gate voltage characteristics of the thin-film transistors fabricated at a low temperature of at a fixed drain voltage of 15 V in saturation region. (c) Dependence of on the postannealing temperatures.
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