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SiN membranes with submicrometer hole arrays patterned by wafer-scale nanosphere lithographya)
a)This paper was presented at the 54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication Conference, Anchorage, Alaska, 1–4 June 2010.7
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Schematic process flow for the fabrication of holey SiN membranes patterned by NSL.

Image of FIG. 2.
FIG. 2.

(Color online) Full wafer and zoom in of spun polystyrene beads: (a) photograph of a full wafer, (b) optical micrograph showing ordered domains, and (c) scanning electron micrograph of 535 nm diameter beads.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Schematic of anisotropic bead shrinkage, (b) cross section of polystyrene beads with an original diameter of 535 nm after size reduction, (c) SEM image of tilted beads after size reduction with 20 nm Al, (d) SEM image of (c) after lift-off, (e) SEM image of dendrites left after size reduction, and (f) SEM image of (e) after lift-off and metal mask removal.

Image of FIG. 4.
FIG. 4.

(Color online) Photographs of the front side of released holey membranes: (a) full-wafer image, still coated with ProTEK, and (b) various size membranes, with removed ProTEK.

Image of FIG. 5.
FIG. 5.

SEM micrographs of a released holey membrane coated on the backside with 5 nmTi/50 nm Au for image contrast enhancement showing (a) large-area uniformity SEM image taken from a 1.2 mm side length membrane and (b) a zoom in into the holeys.

Image of FIG. 6.
FIG. 6.

SEM micrographs of (a) the stencil membrane before and (b) after evaporation of 30 nm Au and (c) Au nanodots deposited onto a Si substrate through the stencil shown in (a) and (b).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiN membranes with submicrometer hole arrays patterned by wafer-scale nanosphere lithographya)