Schematic of two-finger HEMT device used in thermal simulation with SiC, Si, and sapphire substrates.
(Color online) Increase in temperature as a function of dissipated power for SiC, Si, and sapphire substrates for two-finger HEMTs.
(Color online) Maximum channel temperature as the distance, , from the gate finger is increased for various substrates.
(Color online) Maximum channel temperature as the number of gate fingers increases for various substrates with , , and spacing between each gate finger of .
(Color online) Increase in channel temperature for increasing number of gate fingers for both 2D and 3D simulations. Two finger HEMT with 5 W/mm dissipated power on SiC substrate.
(Color online) Distribution of temperature along -axis of Fig. 1 for (a) two-finger HEMT and (b) six-finger HEMT for 2D and 3D simulations on SiC substrate with 5 W/mm dissipated power.
(Color online) Temperature distribution of eight-finger HEMT on SiC substrate with 5 W/mm dissipated power. Temperature scale is in kelvin.
Thermal conductivity of materials used in thermal simulations.
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