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High power InAs quantum dot vertical external-cavity surface-emitting laser
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10.1116/1.3555379
/content/avs/journal/jvstb/29/3/10.1116/1.3555379
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3555379
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM scan of exposed InAs QDs.

Image of FIG. 2.
FIG. 2.

(Color online) Index of refraction profile and simulated electrical field standing wave along the growth direction for the two RPG structures: (a) and (b) . Please note different -axis scales.

Image of FIG. 3.
FIG. 3.

(a) Threshold pump-power density, (b) differential (slope) efficiency, and (c) maximum output power from as-grown QD VECSEL samples under cw operation as a function of heat sink temperature.

Image of FIG. 4.
FIG. 4.

QD VECSEL output power vs incident pump power for two different output coupler transmission values for CVD diamond mounted QD VECSEL.

Image of FIG. 5.
FIG. 5.

QD VECSEL lasing spectra for different incident pump powers.

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/content/avs/journal/jvstb/29/3/10.1116/1.3555379
2011-02-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High power 1.25 μm InAs quantum dot vertical external-cavity surface-emitting laser
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3555379
10.1116/1.3555379
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