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Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering
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10.1116/1.3571760
/content/avs/journal/jvstb/29/3/10.1116/1.3571760
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3571760

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Representative transfer characteristics for TFTs with ZnO film deposited by CSP and ULPS: (a) CSP and (b) ULPS. The triangular data denote the field-effect mobility.

Image of FIG. 2.
FIG. 2.

(Color online) Representative output characteristics for ULPS-ZnO TFT.

Image of FIG. 3.
FIG. 3.

(Color online) Tilted SEM (the inset shows the cross-sectional images) and AFM images for the ZnO films deposited by CSP and ULPS: SEM images of (a) CSP and (b) ULPS, and AFM images of (c) CSP and (d) ULPS.

Image of FIG. 4.
FIG. 4.

(Color online) Measured XRR data for the ZnO films deposited by CSP and ULPS.

Image of FIG. 5.
FIG. 5.

(Color online) Variation of optical absorption coefficient for the ZnO films deposited by CSP and ULPS as a function of the photon energy (eV). The inset figures are enlarged graphs of as a function of the photon energy (eV), respectively.

Tables

Generic image for table
TABLE I.

Comparison of the various parameters including , SS, , , and for the CSP- and ULPS-deposited ZnO TFTs.

Generic image for table
TABLE II.

Comparison of the parameters including the film thickness, roughness and density for CSP- and ULPS-deposited ZnO thin film. These values were obtained from the simulation of XRR data.

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/content/avs/journal/jvstb/29/3/10.1116/1.3571760
2011-03-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3571760
10.1116/1.3571760
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