Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering
(Color online) Representative transfer characteristics for TFTs with ZnO film deposited by CSP and ULPS: (a) CSP and (b) ULPS. The triangular data denote the field-effect mobility.
(Color online) Representative output characteristics for ULPS-ZnO TFT.
(Color online) Tilted SEM (the inset shows the cross-sectional images) and AFM images for the ZnO films deposited by CSP and ULPS: SEM images of (a) CSP and (b) ULPS, and AFM images of (c) CSP and (d) ULPS.
(Color online) Measured XRR data for the ZnO films deposited by CSP and ULPS.
(Color online) Variation of optical absorption coefficient for the ZnO films deposited by CSP and ULPS as a function of the photon energy (eV). The inset figures are enlarged graphs of as a function of the photon energy (eV), respectively.
Comparison of the various parameters including , SS, , , and for the CSP- and ULPS-deposited ZnO TFTs.
Comparison of the parameters including the film thickness, roughness and density for CSP- and ULPS-deposited ZnO thin film. These values were obtained from the simulation of XRR data.
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