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Epitaxial growth of (100)-oriented ceria film on -plane using buffer layers by pulse laser molecular beam epitaxy
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10.1116/1.3574523
/content/avs/journal/jvstb/29/3/10.1116/1.3574523
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3574523
/content/avs/journal/jvstb/29/3/10.1116/1.3574523
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/content/avs/journal/jvstb/29/3/10.1116/1.3574523
2011-04-05
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3574523
10.1116/1.3574523
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