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Polarity controlled InAs{111} films grown on Si(111)
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10.1116/1.3589807
/content/avs/journal/jvstb/29/3/10.1116/1.3589807
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3589807
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Filled-state STM images of InAs(111)A film (10 ML) grown on the surface. The unit cell is outlined in (b). The image dimensions are (a) and (b). The images were taken with a sample bias of −0.5 V. The three-coordinated As atoms manifest themselves as bright features in (b).

Image of FIG. 2.
FIG. 2.

(Color online) (a) HAADF-STEM image obtained from the InAs(111)A/Si(111) interface. The spacing of misfit dislocations is about 30 Å. The image dimension is . (b) and (c) are the magnified images of the InAs film and Si substrate, respectively.

Image of FIG. 3.
FIG. 3.

Empty-state STM image of the InAs(111)A film (5 ML) grown on the surface. The image dimension is . The image was taken with a sample bias of 2.0 V. The dashed line shows the position of the misfit dislocations.

Image of FIG. 4.
FIG. 4.

Filled-state STM images taken from InAs (a), (b), and GaAs (c) films grown on the surface. The image dimension is .

Image of FIG. 5.
FIG. 5.

Filled-state STM images of InAs(111)B film (10 ML) grown on the surface. The image dimensions are (a) and (b). The unit cell is outlined in (b). The images were taken with a sample bias of −2.5 V.

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/content/avs/journal/jvstb/29/3/10.1116/1.3589807
2011-05-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarity controlled InAs{111} films grown on Si(111)
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3589807
10.1116/1.3589807
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