Schematic cross-sectional view of a fabricated double mesa DHBT.
Schematic of process sequence for DHBT.
(Color online) SEM micrographs of trilevel resist structure after RIE (a), after soaking in developer (b), and after UV-ozone treatment (c).
(Color online) SEM micrographs of as-deposited emitter metal (a) and emitter metal after lift-off process (b).
SEM micrograph of fabricated guard-ring structure.
(Color online) SEM micrograph of device prior to BCB planarization (a); SEM micrograph of air-bridge after isolation wet-etching and the resist strip (b).
(Color online) Top view optical microscope image for a fabricated device after Ti/Au interconnect metal deposition.
(Color online) Gummel plot and current gain (a) and common-emitter characteristics (b) of the DHBT.
(Color online) Current gain and Mason’s unilateral gain rf extrapolations of DHBT (a); overview of and data for high-speed InP- and SiGe-based HBTs. The figure-of merit was defined as (b).
Epitaxial layer structure parameters of fabricated InAlAs/InGaAsSb/InGaAs DHBTs.
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