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Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors
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10.1116/1.3589808
/content/avs/journal/jvstb/29/3/10.1116/1.3589808
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3589808

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-sectional view of a fabricated double mesa DHBT.

Image of FIG. 2.
FIG. 2.

Schematic of process sequence for DHBT.

Image of FIG. 3.
FIG. 3.

(Color online) SEM micrographs of trilevel resist structure after RIE (a), after soaking in developer (b), and after UV-ozone treatment (c).

Image of FIG. 4.
FIG. 4.

(Color online) SEM micrographs of as-deposited emitter metal (a) and emitter metal after lift-off process (b).

Image of FIG. 5.
FIG. 5.

SEM micrograph of fabricated guard-ring structure.

Image of FIG. 6.
FIG. 6.

(Color online) SEM micrograph of device prior to BCB planarization (a); SEM micrograph of air-bridge after isolation wet-etching and the resist strip (b).

Image of FIG. 7.
FIG. 7.

(Color online) Top view optical microscope image for a fabricated device after Ti/Au interconnect metal deposition.

Image of FIG. 8.
FIG. 8.

(Color online) Gummel plot and current gain (a) and common-emitter characteristics (b) of the DHBT.

Image of FIG. 9.
FIG. 9.

(Color online) Current gain and Mason’s unilateral gain rf extrapolations of DHBT (a); overview of and data for high-speed InP- and SiGe-based HBTs. The figure-of merit was defined as (b).

Tables

Generic image for table
TABLE I.

Epitaxial layer structure parameters of fabricated InAlAs/InGaAsSb/InGaAs DHBTs.

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/content/avs/journal/jvstb/29/3/10.1116/1.3589808
2011-05-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3589808
10.1116/1.3589808
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