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Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
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10.1116/1.3593002
/content/avs/journal/jvstb/29/3/10.1116/1.3593002
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3593002
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic cross-sectional view of an isolation-blocking voltage tester fabricated on the AlGaN/GaN HEMT structure.

Image of FIG. 2.
FIG. 2.

(Color online) Isolation current-voltage characteristics measured across two Ohmic contact pads separated with an isolation-implanted space ranging from 1.7 or . These testers were passivated with different thicknesses of passivation layer. The distance, , between the dielectric openings was kept at .

Image of FIG. 3.
FIG. 3.

(Color online) Microscope pictures of device before (top) and after (bottom) experiencing early breakdown.

Image of FIG. 4.
FIG. 4.

(Color online) ATLAS simulated (a) potential distribution (b) Electric field distribution of a 1250 Å passivated tester with a gap biased at 400 V.

Image of FIG. 5.
FIG. 5.

(Color online) Comparison between ATLAS simulated isolation-blocking voltages and the experimental data, where the isolation-blocking voltages were plotted as the functions of the thickness of the passivation layer and the spacing of the isolation-implanted region.

Image of FIG. 6.
FIG. 6.

(Color online) Isolation-blocking voltage as a function of the distance between the two contact window openings on the samples passivated with 375 nm of layer.

Image of FIG. 7.
FIG. 7.

(Color online) Isolation-blocking voltage as a function of the distance between the two contact window openings on the samples passivated with 375 nm or of layer. The samples exhibited with an early breakdown voltage were labeled with stars and triangles.

Image of FIG. 8.
FIG. 8.

(Color online) I-V characteristics of testers passivated with 375 nm of layer deposited at different rf powers (Watt). The separation between the contact window openings was kept at and the implanted isolation gap was .

Image of FIG. 9.
FIG. 9.

Drain I-V characteristics of the HEMT. The device exhibited a saturation current and a drain breakdown voltage of 1000 V.

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/content/avs/journal/jvstb/29/3/10.1116/1.3593002
2011-05-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3593002
10.1116/1.3593002
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