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Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
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10.1116/1.3593002
/content/avs/journal/jvstb/29/3/10.1116/1.3593002
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3593002
/content/avs/journal/jvstb/29/3/10.1116/1.3593002
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/content/avs/journal/jvstb/29/3/10.1116/1.3593002
2011-05-25
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/3/10.1116/1.3593002
10.1116/1.3593002
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