(Color online) Schematic cross-sectional view of an isolation-blocking voltage tester fabricated on the AlGaN/GaN HEMT structure.
(Color online) Isolation current-voltage characteristics measured across two Ohmic contact pads separated with an isolation-implanted space ranging from 1.7 or . These testers were passivated with different thicknesses of passivation layer. The distance, , between the dielectric openings was kept at .
(Color online) Microscope pictures of device before (top) and after (bottom) experiencing early breakdown.
(Color online) ATLAS simulated (a) potential distribution (b) Electric field distribution of a 1250 Å passivated tester with a gap biased at 400 V.
(Color online) Comparison between ATLAS simulated isolation-blocking voltages and the experimental data, where the isolation-blocking voltages were plotted as the functions of the thickness of the passivation layer and the spacing of the isolation-implanted region.
(Color online) Isolation-blocking voltage as a function of the distance between the two contact window openings on the samples passivated with 375 nm of layer.
(Color online) Isolation-blocking voltage as a function of the distance between the two contact window openings on the samples passivated with 375 nm or of layer. The samples exhibited with an early breakdown voltage were labeled with stars and triangles.
(Color online) I-V characteristics of testers passivated with 375 nm of layer deposited at different rf powers (Watt). The separation between the contact window openings was kept at and the implanted isolation gap was .
Drain I-V characteristics of the HEMT. The device exhibited a saturation current and a drain breakdown voltage of 1000 V.
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