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Surface templates fabricated using a focused ion beam for lateral positioning of nanoscale islands on Si (001) substrates
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10.1116/1.3602112
/content/avs/journal/jvstb/29/4/10.1116/1.3602112
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3602112
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic overview of experimental procedures.

Image of FIG. 2.
FIG. 2.

(Color online) (a) AFM image with edges roughly aligned along the directions for Ga FIB pattern. Dosage was for the patterned square area. (b) milled area after annealing for 1 h at . (c) HAADF image of the Ga nanocrystals formed in the patterned area. (d) TEM bright field image of patterned area with insert showing selected area diffraction pattern of the same area.

Image of FIG. 3.
FIG. 3.

(Color online) AFM images of (a) 1 pA beam current, dosage point mills before and (b) after annealing. The -scale for both images is 8.5 nm, (c) 10 pA beam current, dosage point mills before and (d) after annealing. The -scale for both images is 10.2 nm.

Image of FIG. 4.
FIG. 4.

(Color online) AFM image with edges roughly aligned along the directions for films deposited on substrates patterned at single points using a 1 pA beam current. The 10 nm were grown on a 6.5 nm Si buffer layer at and 1 Å/s. Pattern dosages were (a) , (b) , (c) , and (d) .

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/content/avs/journal/jvstb/29/4/10.1116/1.3602112
2011-06-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface templates fabricated using a focused ion beam for lateral positioning of nanoscale islands on Si (001) substrates
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3602112
10.1116/1.3602112
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