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Atomic structure and optical properties of InAs submonolayer depositions in GaAs
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10.1116/1.3602470
/content/avs/journal/jvstb/29/4/10.1116/1.3602470
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3602470
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) [(a) and (b)] Diagrams of the nominal layer sequence, containing stacks of 0.5 ML InAs and GaAs spacers with different thicknesses. (a) Samples with 10-fold stacks used for the PL investigation. (b) Sample with four fivefold stacks used for the XSTM investigation. (c) XSTM overview image across all investigated layers, labeled by their GaAs spacer thickness and respective stack number.

Image of FIG. 2.
FIG. 2.

Filled-state XSTM overview image of stack 1 (partly) and stack 2 (completely) with 16 ML and 4 ML GaAs spacers, respectively. The image was taken at the (110) cleavage surface using a sample bias of and a tunneling current of .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Filled-state XSTM image of stack 1 with 16 ML GaAs spacers, taken at the (110) cleavage surface using and . (b) Same as in (a), but for guiding the eye, some of the InAs-rich agglomerations are indicated by dashed boxes.

Image of FIG. 4.
FIG. 4.

(Color online) Determination of the local lattice parameter and the stoichiometry along growth direction for stack 1 with 16 ML GaAs spacers. (a) Filled-state XSTM image showing the analyzed (110) surface area, using and . (b) Graph showing the analysis of the local lattice parameter [(black) squares, left axis] as function of the position along the [001] growth direction and the corresponding In concentration [(red) solid line, right axis] fitted using the segregation model described by Eq. (1).

Image of FIG. 5.
FIG. 5.

(Color online) (a) Filled-state XSTM image of stack 2 with 4 ML GaAs spacers, taken at the (110) cleavage surface using and . (b) Same as in (a), but for guiding the eye, some of the InAs-rich agglomerations are indicated by (yellow) dashed lines.

Image of FIG. 6.
FIG. 6.

(Color online) Determination of the local lattice parameter and the stoichiometry along growth direction for stack 2 with 4 ML GaAs spacers. In the inset, the filled-state XSTM image, taken at the (110) cleavage surface using and , shows the analyzed area. The (black) squares (left axis) are the measured data points, while the (red) line (right axis) is the fitted InAs concentration using Eq. (1).

Image of FIG. 7.
FIG. 7.

(Color online) Close-view XSTM images of stack 4 with 1.5 ML GaAs spacers taken at both the (110) and the cleavage surfaces. [(a) and (b)] Filled-state XSTM images taken at the (110) cleavage surface using and . [(c) and (d)] Filtered empty-state XSTM taken at the cleavage surface using and . At the XSTM images in (b) and (d) some of the InAs-rich agglomerations are indicated by (yellow) dashed lines for guiding the eye.

Image of FIG. 8.
FIG. 8.

(Color online) Atomic scheme of the growth of stack 2 with 4 ML GaAs spacers. The indium atoms are drawn in yellow and the gallium atoms in cyan (the arsenic is left out for clarity). (a) Nominal submonolayer depositions, leading to monolayer high islands.6 (b) Observed material arrangement, including segregation along the [001] growth direction and lateral surface diffusion, resulting in a vertical correlation of the InAs-rich agglomerations.

Image of FIG. 9.
FIG. 9.

Normalized PL spectra taken at for 10 InAs submonolayers with different GaAs spacer thicknesses , as labeled. The spectrum labeled (dashed line) stems from a single InAs submonolayer, corresponding to an infinite GaAs spacing.

Image of FIG. 10.
FIG. 10.

Normalized PL spectra of a 10-fold submonolayer stack with 2.2 ML GaAs spacers (SML, gray) and of an InGaAs quantum well (QW, black) with same total thickness and the same total amount of InAs.

Image of FIG. 11.
FIG. 11.

(Color online) Line shape analysis of the PL spectrum (black solid line) of a 10-fold submonolayer stack with 1.5 ML GaAs spacers. The (red) dotted, gray solid, and (cyan) dashed lines represent the 0D and 2D contributions and their sum, respectively.

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/content/avs/journal/jvstb/29/4/10.1116/1.3602470
2011-06-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic structure and optical properties of InAs submonolayer depositions in GaAs
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3602470
10.1116/1.3602470
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