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Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes
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10.1116/1.3607315
/content/avs/journal/jvstb/29/4/10.1116/1.3607315
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3607315
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagrams of vertical LED chips fabricated (a) without CBRs and CBLs (referred to here as “LED-ref”), (b) with CBLs (“LED-”), and (c) with plasma-treated CBRs (-CBRs).

Image of FIG. 2.
FIG. 2.

(Color online) Typical forward current-voltage characteristics of vertical LEDs fabricated with and without current-blocking (CB).

Image of FIG. 3.
FIG. 3.

(Color online) Light output power-current characteristics of vertical LEDs fabricated with and without the CB processes.

Image of FIG. 4.
FIG. 4.

(Color online) relations of the ITO-based Schottky contacts to p-GaN before and after plasma treatment.

Image of FIG. 5.
FIG. 5.

(Color online) Current density-voltage relations of ITO-based Schottky contacts on p-GaN were characterized at 300 K. The dotted lines denote fitting curves calculated using the TFE model.

Image of FIG. 6.
FIG. 6.

(Color online) Ga 2p core levels obtained from the contacts/GaN interface regions before and after plasma treatment.

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/content/avs/journal/jvstb/29/4/10.1116/1.3607315
2011-07-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3607315
10.1116/1.3607315
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