Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes
(Color online) Schematic diagrams of vertical LED chips fabricated (a) without CBRs and CBLs (referred to here as “LED-ref”), (b) with CBLs (“LED-”), and (c) with plasma-treated CBRs (-CBRs).
(Color online) Typical forward current-voltage characteristics of vertical LEDs fabricated with and without current-blocking (CB).
(Color online) Light output power-current characteristics of vertical LEDs fabricated with and without the CB processes.
(Color online) relations of the ITO-based Schottky contacts to p-GaN before and after plasma treatment.
(Color online) Current density-voltage relations of ITO-based Schottky contacts on p-GaN were characterized at 300 K. The dotted lines denote fitting curves calculated using the TFE model.
(Color online) Ga 2p core levels obtained from the contacts/GaN interface regions before and after plasma treatment.
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