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Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors
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10.1116/1.3607601
/content/avs/journal/jvstb/29/4/10.1116/1.3607601
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3607601

Figures

Image of FIG. 1.
FIG. 1.

Off-state gate currents as a function of gate voltage for the HEMTs fabricated with Ni/Au (a) or Pt/Ti/Au (b) gate metallization.

Image of FIG. 2.
FIG. 2.

(Color online) Drain IVs of HEMTs fabricated with Ni/Au (a) and Pt/Ti/Au (b) gate metallization measured before and after the off-state stress. For the Ni/Au gated HEMT, the devices were stressed with for 60 s at each gate voltage step until the gate voltage reached −85 V. The same condition used for the Pt/Ti/Au gated HEMT except the gate voltage reached −100 V.

Image of FIG. 3.
FIG. 3.

(Color online) Schottky gate characteristics of the HEMTs fabricated with Ni/Au (a) and Pt/Ti/Au (b) gate metallization measured before and after the off-state stress. For the Ni/Au gated HEMT, the devices were stressed with for 60 s at each gate voltage step until the gate voltage reached −85 V. The same condition used for the Pt/Ti/Au gated HEMT except the gate voltage reached −100 V.

Image of FIG. 4.
FIG. 4.

(Color online) Subtheshold drain current of AlGaN/GaN HEMTs fabricated with Pt/Ti/Au (a) and Ni/Au (b) metallization biased at different drain voltage.

Tables

Generic image for table
TABLE I.

Summary of sub-threshold slope and ON/OFF ratio of AlGaN/GaN HEMTs with Pt/Ti/Au and Ni/Au gate metallization before and after off-state electric step-stress.

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/content/avs/journal/jvstb/29/4/10.1116/1.3607601
2011-07-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3607601
10.1116/1.3607601
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