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Electrical characteristics of buried-Pt Schottky contacts on thin InP/InAlAs heterostructures
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10.1116/1.3610171
/content/avs/journal/jvstb/29/4/10.1116/1.3610171
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3610171

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Bright-field (left) and high-angle annular dark-field (right) STEM images of the Schottky contact fabricated on a 7-nm-thick InP layer. (b) Bright-field (left) and high-angle annular dark-field (right) STEM images of the Schottky contact fabricated by utilizing buried-Pt technology on 7-nm-thick InP layer annealed at .

Image of FIG. 2.
FIG. 2.

(Color online) (a) Bright-field (left) and high-angle annular dark-field (right) STEM images of the Schottky contact fabricated on 3-nm-thick InP layer. (b) Bright-field (left) and high-angle annular dark-field (right) STEM images of the Schottky contact fabricated by utilizing buried-Pt technology on 3-nm-thick InP layer annealed at .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Schottky barrier heights and (b) ideality factors with respect to the annealing temperatures for various Schottky diodes fabricated on InP/InAlAs heterostructures having different InP layer thicknesses. The top and bottom of the error bars correspond to , where and are the mean and standard deviation of the measured quantities, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) characteristic of the Schottky diodes fabricated on InP/InAlAs heterostructures having different InP layer thicknesses through a thermal annealing process at .

Tables

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TABLE I.

RMS surface roughness measured after etching the InP layer down to various thicknesses through selective HCl-based wet-etching, Ar-based plasma-etching, and atomic layer etching (ALET).

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/content/avs/journal/jvstb/29/4/10.1116/1.3610171
2011-08-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of buried-Pt Schottky contacts on thin InP/InAlAs heterostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3610171
10.1116/1.3610171
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