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Influence of gate metallization processes on the electrical characteristics of high-k/ interfaces
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10.1116/1.3610989
/content/avs/journal/jvstb/29/4/10.1116/1.3610989
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3610989
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Capacitance-voltage curves measured as a function of frequency (from 1 kHz to 1 MHz) at room temperature for MOSCAPs with dielectrics grown by ALD and (a) Ni top electrode deposited by electron beam evaporation, (b) Ni top electrode deposited by thermal evaporation, and [(c)–(d)] same samples as in (a) and (b) after forming gas annealing.

Image of FIG. 2.
FIG. 2.

(Color online) Capacitance-voltage curves measured as a function of frequency (from 1 kHz to 1 MHz) at room temperature for MOSCAPs with dielectrics and (a) Pt electrode deposited by electron beam evaporation, (b) Ni electrode deposited by thermal evaporation, and (c) same sample as in (a) after forming gas annealing.

Image of FIG. 3.
FIG. 3.

(Color online) Normalized parallel conductance, , as a function of gate voltage and frequency for MOSCAPs with (a) the dielectric with a Ni electrode deposited by thermal evaporation (b) a dielectric with a Pt electrode deposited by electron beam evaporation. [(c)–(d)] Same samples as in (a) and (b) after forming gas annealing.

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/content/avs/journal/jvstb/29/4/10.1116/1.3610989
2011-08-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/4/10.1116/1.3610989
10.1116/1.3610989
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