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Effect of nanoscale ripples on the formation of ZnO quantum dots
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10.1116/1.3633689
/content/avs/journal/jvstb/29/5/10.1116/1.3633689
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/5/10.1116/1.3633689
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM micrographs of nano-scale ripples on Si substrates obtained by 8 keV ion beam sputtering with incident angles at (a) 30°, (b) 40°, (c) 50°, (d) 60°, (e) 70°, and (f) 80°. The arrow indicates the projection of the incident ion beam. The AFM scan area is 1 × 1 μm2.

Image of FIG. 2.
FIG. 2.

(a) Change of spatial wavelength due to ion beam energy and incident angles, (b) variation of spatial wavelength as a function of argon ion beam energy with beam incident angles at 40° and 60°.

Image of FIG. 3.
FIG. 3.

SEM micrographs of ZnO QDs deposited on Si substrates with nano-scale ripples at (a) 250 °C, (b) 275 °C, (c) 300 °C, (d) 350 °C. The anode current and deposition time were 280 μA and 20 min, respectively. The arrow in Fig 3(b) indicates an individual QD.

Image of FIG. 4.
FIG. 4.

(Color online) (a) An AFM micrograph of ZnO QDs deposited on Si substrates with nano-scale ripples, (b) height distribution of ZnO QDs deposited on Si substrates with nano-scale ripple with a distribution width of 2 nm, (c) diameter distribution of ZnO QDs deposited on Si substrates with nano-scale ripple with a distribution width of 11 nm, (d) an AFM micrographs of ZnO QDs deposited on pristine Si substrates, (e) height distribution of ZnO QDs deposited on pristine Si substrates with a distribution width of 4 nm, (f) diameter distribution of ZnO QDs deposited on pristine Si substrates with a distribution width of 13 nm. ZnO QDs were deposited at 300 °C for 15 min utilizing an ion anode current of 500 μA. The AFM scan area is 1 × 1 μm2.

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/content/avs/journal/jvstb/29/5/10.1116/1.3633689
2011-09-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of nanoscale ripples on the formation of ZnO quantum dots
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/5/10.1116/1.3633689
10.1116/1.3633689
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