(Color online) Chemical pattern fabrication process, followed by DSA of a thin film of BCP. The most time-consuming process steps are highlighted by the dashed rectangles.
(Color online) Top-down SEM images of the AuNP/P2VP-OH test after cross-linking X-PS-BCB for a range of times at 200 and 250 °C. The density of AuNP is affected by the P2VP residue on the surface; thus, it can be an indicator for determining the suitable condition to achieve an X-PS film whose surface chemistry will not be altered by the following brush grafting process. Each image is 1 μm × 1 μm large.
(Color online) P(S-r-MMA)-OH brush thickness (after rinsing away the unreacted materials) grafted on a bare Si wafer at 250 ° C as a function of annealing time. The annealing was performed on a hot plate in an N2 environment. The saturated thickness was ∼7.5 nm, which was achieved in ∼5 min under the given conditions.
Top-down SEM image of DSA over an area of 7.6 μm × 5.7 μm. The solvent for polymer solution was PGMEA. The PMMA block was not selectively removed.
(Color online) (a) Color map of the brush thickness across a 300 mm wafer. The label of 1%–2% 55PSOH was the concentration of the brush solution, which corresponds to different as-spun thicknesses. Because the thickness was only measured along the diameter, only a band is shown in each map. The color scale for all four maps is kept the same. (b) The brush thickness and variation vs the as-spun film thickness.
(Color online) Water contact angle before and after the P(S-r-MMA)-OH brush (50%-OH) grafting of different materials. The Si-containing antireflective coating (SiOC) and Si nitride (SN) are the materials that would constitute the background region when the DSA process is integrated with 193i lithography. LDSOC, HDSOC, and amorphous carbon (APF) are the candidate materials to replace the X-PS. The pristine (as-deposited) and after processing contact angles of each materials are shown. The X-PS was cross-linked to completion with the BCB cross-linker.
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