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Fabrication of two-dimensional tungsten photonic crystals for high-temperature applications
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Image of FIG. 1.
FIG. 1.

General process flow: After depositing a layer of Cr on the W substrate, lithography layers consisting of the ARC and the PR are coated on the Cr. After lithographic exposure, the desired pattern is transferred from the one layer to the next layer by various etching processes until periodic cylindrical holes on the W substrate are obtained.

Image of FIG. 2.
FIG. 2.

Schematics of the laser interference lithography used in exposing the photoresist.

Image of FIG. 3.
FIG. 3.

SEM images of the developed patterns in the photoresist for different exposure times, whereby the laser power is 170 μW at the sample plane.

Image of FIG. 4.
FIG. 4.

SEM image showing successful pattern transfer to the antireflection coating after undergoing oxygen based reactive ion etching at 140 W for 3 min and 30 s.

Image of FIG. 5.
FIG. 5.

SEM images demonstrating the control of etch times to obtain the desired circular hole average diameter on the chromium mask.

Image of FIG. 6.
FIG. 6.

Chrome mask after lithography steps. Prior to lithography, chrome deposition was performed at (a) room temperature and (b) high temperature (250 °C).

Image of FIG. 7.
FIG. 7.

(Color online) (a) SEM image of the final 2D W PhC and (b) cross-sectional profile mapped using an AFM.

Image of FIG. 8.
FIG. 8.

(Color online) A marked enhancement is seen in the emissivity of the 2D W PhC at wavelengths below 1.7μm.


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Different RIE etch parameters and their effects on etch rate and mask damage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of two-dimensional tungsten photonic crystals for high-temperature applications