General process flow: After depositing a layer of Cr on the W substrate, lithography layers consisting of the ARC and the PR are coated on the Cr. After lithographic exposure, the desired pattern is transferred from the one layer to the next layer by various etching processes until periodic cylindrical holes on the W substrate are obtained.
Schematics of the laser interference lithography used in exposing the photoresist.
SEM images of the developed patterns in the photoresist for different exposure times, whereby the laser power is 170 μW at the sample plane.
SEM image showing successful pattern transfer to the antireflection coating after undergoing oxygen based reactive ion etching at 140 W for 3 min and 30 s.
SEM images demonstrating the control of etch times to obtain the desired circular hole average diameter on the chromium mask.
Chrome mask after lithography steps. Prior to lithography, chrome deposition was performed at (a) room temperature and (b) high temperature (250 °C).
(Color online) (a) SEM image of the final 2D W PhC and (b) cross-sectional profile mapped using an AFM.
(Color online) A marked enhancement is seen in the emissivity of the 2D W PhC at wavelengths below 1.7μm.
Different RIE etch parameters and their effects on etch rate and mask damage.
Article metrics loading...
Full text loading...