Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat
(Color online) Two pattern types were exposed in each experiment to characterize the delay effect in HSQ resist. Pattern (A) was used to inspect 30 nm lines by SEM and pattern (B) were larger squares measured by AFM to plot the contrast curves.
SEM micrographs that reveal the delay effect for HSQ over a period of 12 h for (a) uncoated HSQ on bare silicon, (b) coated with Espacer 300Z on bare silicon, (c) uncoated HSQ on AR3 bottom layer, and (d) S_Enhancer on HSQ on bare silicon.
(Color online) Plot of the e-beam exposure dose required to maintain a constant linewidth over a time delay of 12 h for three different sample types on silicon: (1) uncoated HSQ (squares), (2) ESpacer 300Z on HSQ (circles), and (3) S Enhancer on HSQ (triangle).
(Color online) Contrast curves plotted for uncoated HSQ at 0 (triangle) and 12 h (inverted triangle) and HSQ coated with S Enhancer for 0 (squares) and 12 h (circles) in 100 nm thick resist.
(Color online) Contrast curves plotted for uncoated, 30 nm thick HSQ at 0 (triangle) and 12 h (inverted triangle) and HSQ coated with S Enhancer for 0 (squares) and 12 h (circles).
(Color online) Change in linewidth due to the delay effect for 30 nm lines (nominal) for various exposure doses.
SEM images of 30 nm lines at 0 h (a), (c) and 12 h (b), (d) for 30 nm of HSQ topped with aluminum (a), (b) and PEDOT:PSS (c), (d). The delay effect is minimal for both.
(Color online) Contrast curves plotted for HSQ coated with PEDOT:PSS at 0 (triangle) and 12 h (inverted triangle) and HSQ coated with aluminum for 0 (squares) and 12 h (circles).
Resolution tests for HSQ resist: (a) uncoated, (b) with top capping layer of S_Enhancer, and (c) aluminum, all developed using the salty developer method.
Summary of the various samples that were prepared to investigate the delay-effect in HSQ resist.
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