Schematic of the carbon resonator fabrication process using FIB/EB dual-beam lithography and IB curing.
(Color online) Solubility characteristics of PMMA as a negative-tone resist for EB lithography.
(Color online) Relationship between the ion dose and structural properties of PMMA exposed by 30-kV Ga+ FIB: (a) ion-dose dependence of the developed thickness and the edge height, A inset shows the schematic of cross-section of PMMA film with a trench structure; AFM images of the PMMA film exposed to an ion dose of (b) 0.05 × 1015 ions/cm2, (c) 0.4 × 1015 ions/cm2, and (d) 1 × 1015 ions/cm2.
SIM images of (a) a beam-type resonant structure and (b) a suspended mesh structure. These suspended PMMA structures were fabricated by FIB exposures with an ion dose of 3 × 1015 ions/cm2 and 1 × 1015 ions/cm2, respectively.
SIM images of a suspended PMMA nanowire (a) before and after ion-beam modifications with an ion dose of (b) 5 × 1015 ions/cm2 and (c) 10 × 1015 ions/cm2.
(Color online) Raman spectra before and after curing using IB modification with doses of (i) 1 × 1015 ions/cm2 and (ii) 10 × 1015 ions/cm2.
(Color online) Load–displacement curve obtained by indentation testing of PMMA film cured by ion-beam modification with an ion dose of 10 × 1015 ions/cm2.
(Color online) Vibration spectra of suspended PMMA nanowires before and after curing using IB modification with doses of (i) 1 × 1015 ions/cm2, (ii) 5 × 1015 ions/cm2, and (iii) 10 × 1015 ions/cm2.
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