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Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments
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10.1116/1.3672010
/content/avs/journal/jvstb/30/1/10.1116/1.3672010
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/1/10.1116/1.3672010
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Scanning electron microscope picture of the ZnO nanorods grown on the gate area of the sensor. (b) Optical microscope image of the AlGaN/GaN HEMT sensor chip mounted on a carrier with Au-wire bonding and (c) enlarged images of the ZnO nanorod functionalized area on the AlGaN/GaN HEMT sensors.

Image of FIG. 2.
FIG. 2.

(Color online) Time-dependent drain current of the ZnO nanorod gated AlGaN/GaN HEMTs and time dependant normalized percent drain current change with different CO concentration at 25 °C, 150 °C, and 250 °C.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic of the sensing mechanism of the ZnO nanorod-gated AlGaN/GaN HEMTs.

Image of FIG. 4.
FIG. 4.

(Color online) Drain current of the ZnO nanorod functionalized AlGaN HEMT sensor exposed to 250 ppm CO and pure nitrogen at different temperatures.

Image of FIG. 5.
FIG. 5.

(Color online) Time-dependent drain current and CO detection sensitivity of a ZnO nanorod functionalized AlGaN HEMT sensor exposed to 50 ppm CO concentration measured at 150 °C.

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/content/avs/journal/jvstb/30/1/10.1116/1.3672010
2011-12-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/1/10.1116/1.3672010
10.1116/1.3672010
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