(Color online) (a) Scanning electron microscope picture of the ZnO nanorods grown on the gate area of the sensor. (b) Optical microscope image of the AlGaN/GaN HEMT sensor chip mounted on a carrier with Au-wire bonding and (c) enlarged images of the ZnO nanorod functionalized area on the AlGaN/GaN HEMT sensors.
(Color online) Time-dependent drain current of the ZnO nanorod gated AlGaN/GaN HEMTs and time dependant normalized percent drain current change with different CO concentration at 25 °C, 150 °C, and 250 °C.
(Color online) Schematic of the sensing mechanism of the ZnO nanorod-gated AlGaN/GaN HEMTs.
(Color online) Drain current of the ZnO nanorod functionalized AlGaN HEMT sensor exposed to 250 ppm CO and pure nitrogen at different temperatures.
(Color online) Time-dependent drain current and CO detection sensitivity of a ZnO nanorod functionalized AlGaN HEMT sensor exposed to 50 ppm CO concentration measured at 150 °C.
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