1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strategy for focused ion beam compound material removal for circuit editing
Rent:
Rent this article for
USD
10.1116/1.3674280
/content/avs/journal/jvstb/30/1/10.1116/1.3674280
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/1/10.1116/1.3674280
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) GAE dependence on acceleration voltage for using various precursors on different materials: (a) CDO, (b) Tungsten, (c) Copper, (d) CVD-SiO2, and (e) Si.

Image of FIG. 2.
FIG. 2.

(Color online) Chemical enhancement of different GAE chemistries on different materials: (a) CDO, (b) Tungsten, (c) Copper, (d) CVD-SiO2, and (e) Si.

Image of FIG. 3.
FIG. 3.

(Color online) Etch rate ratio of different etchants for common semiconductor material pairs: (a) Cu/CDO, (b) Si/CDO, (c) tungsten/CDO, (d) tungsten/CVD-SiO2.

Image of FIG. 4.
FIG. 4.

(Color online) Etch/sputter yield dependence on acceleration voltage of different GAE chemistries on different materials: (a) Si single crystal (001), (b) CDO, (c) Tungsten, and (d) Copper.

Image of FIG. 5.
FIG. 5.

(Color online) Etch/sputter dependence on acceleration voltage for various materials by frequently used GAE chemistries: (a) Bare beam (pure sputtering), (b) H2O, (c) XeF2, and (d) Br2.

Image of FIG. 6.
FIG. 6.

Cross-section image of 50 kV bare beam etch through mixed field of CVD-SiO2, tungsten, copper and ILD, in a 45 nm technology microprocessor. The holes were filled by CVD-SiO2 for surface definition.

Image of FIG. 7.
FIG. 7.

Cross-section image of 50 kV XeF2 etched through mixed field of CVD-SiO2, tungsten, copper and ILD, in a 45 nm technology microprocessor. The holes were filled by tungsten. Over-etch is observed through the CDO.

Loading

Article metrics loading...

/content/avs/journal/jvstb/30/1/10.1116/1.3674280
2012-01-06
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strategy for focused ion beam compound material removal for circuit editing
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/1/10.1116/1.3674280
10.1116/1.3674280
SEARCH_EXPAND_ITEM