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Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials
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10.1116/1.3668088
/content/avs/journal/jvstb/30/2/10.1116/1.3668088
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3668088
/content/avs/journal/jvstb/30/2/10.1116/1.3668088
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/content/avs/journal/jvstb/30/2/10.1116/1.3668088
2011-12-13
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3668088
10.1116/1.3668088
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