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Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy
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10.1116/1.3672022
/content/avs/journal/jvstb/30/2/10.1116/1.3672022
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3672022
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Structure of sample A, consisting of 1 ML-InAs, 2 ML-InAs, and 4 ML-InAs QWs grown by SPE. (b) g 002 DF TEM micrograph (sensitive to composition) of the three SPE-grown QWs.

Image of FIG. 2.
FIG. 2.

(Color online) Experimental In distribution and simulated profiles of the SPE-grown (a) 1 ML-InAs, (b) 2 ML InAs, and (c) 4 ML InAs QWs, where the interfaces are defined by a sigmoidal function. L lower and L upper denote the width of the lower and upper interfaces, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Experimental In distribution and simulated profile of a (In,Ga)As/GaAs QW grown by conventional MBE in the 2D island nucleation mode, where the interfaces are defined by sigmoidal functions.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Structure of sample B, consisting of three SPE-grown 4 ML-InAs QWs to study the impact of self-annealing during growth. (b) g 002 DF TEM micrograph (sensitive to composition) of the three SPE-grown QWs. The image reveals deviations from the nominal thickness in the C-MBE grown GaAs barriers.

Image of FIG. 5.
FIG. 5.

(Color online) g 002 DF TEM micrographs (sensitive to composition) of the SPE-grown QWs (a) as-grown, (b) in situ annealed, and (c) ex-situ annealed (RTA) to study the effect of post-growth thermal annealing.

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/content/avs/journal/jvstb/30/2/10.1116/1.3672022
2011-12-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3672022
10.1116/1.3672022
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