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Growth of GaSb1−xBix by molecular beam epitaxy
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10.1116/1.3672025
/content/avs/journal/jvstb/30/2/10.1116/1.3672025
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3672025

Figures

Image of FIG. 1.
FIG. 1.

(Color online) 10 × 10 μm2 AFM amplitude images of samples A1, A2, and A3 grown with a 0.5 μm/h growth rate on GaSb substrates. The inset in (b) is a zoom-in image with a 1 × 1 μm2 area.

Image of FIG. 2.
FIG. 2.

(Color online) XRD (004) rocking curves of the sample A3 with a growth rate of 0.5 μm/h (red dashed curve) and the sample B4 at 0.1 μm/h (blue solid curve) at the same Tg, 380 °C on GaSb substrates.

Image of FIG. 3.
FIG. 3.

(Color online) Bi vapor pressure vs temperature (blue line) and selected growth temperatures at particular Bi BEPs for the samples grown with 0.1 μm/h growth rate (blue round markers) and 0.5 μm/h (red square markers), respectively.

Image of FIG. 4.
FIG. 4.

(Color online) 1 × 1 μm2 AFM height images for the group B samples grown at 0.1 μm/h growth rate on GaSb substrates. RMS roughness in units of nm obtained from 1 × 1 μm2 and 10 × 10 μm2 scans is shown before and after the slash, respectively.

Image of FIG. 5.
FIG. 5.

(Color online) Structural property measurement results of the group B samples. (a) SIMS profile of different elements in the sample grown at 370 °C. (b) Normalized Bi intensity in SIMS profiles vs Bi/Sb ratio and Tg. (c) Lattice constant of GaSb1−xBix layers extracted from XRD (115) and (11-5) series measurements.

Image of FIG. 6.
FIG. 6.

RHEED pattern for the sample C4. (a) GaAs under Sb over pressure, (b) 9 nm GaSb1−xBix, (c) 27 nm GaSb1−xBix, and (d) growth 200 nm GaSb1−xBix. The black dot at the up-right of the image is from a damage of the phosphorus screen.

Image of FIG. 7.
FIG. 7.

(Color online) 10 × 10 μm2 AFM height images for the group C samples grown on GaAs substrates. RMS roughness in units of nm obtained from 1 × 1 μm2 and 10 × 10 μm2 scans is shown before and after the slash, respectively.

Image of FIG. 8.
FIG. 8.

(Color online) SIMS measurement results for the group C samples grown on GaAs substrates. (a) SIMS profile of different elements in the sample grown at 390 °C. The curves are smoothened by five-point averaging. (b) Normalized Bi intensity vs Bi/Sb ratio and Tg. The vertical axis scale is the same with Fig. 5(b).

Tables

Generic image for table
TABLE I.

Description of the samples.

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/content/avs/journal/jvstb/30/2/10.1116/1.3672025
2012-01-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of GaSb1−xBix by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3672025
10.1116/1.3672025
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