Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy
(Color online) Schematic illustration of the InAs/InAs1−xSbx SL structure design for: (a) ordered-alloy and (b) random alloy.
(Color online) High-resolution XRD (004) ω-2θ profiles and corresponding simulations (offset below each measurement) for Samples A and B,
Cross-sectional electron micrograph showing entire SL structure of Sample A, and confirming very low defect density.
Higher-magnification image clearly showing well-ordered In(As)Sb/InAs(Sb) MQW structure within the individual InAs1−xSbx layers of Sample A.
(a) Low magnification image of Sample B showing typical defective region: (b) Higher-magnification image showing the presence of the In(As)Sb/InAs(Sb) MQW structure apparently only within the first InAs1−xSbx layer.
Low magnification image of Sample C showing the entire structure.
Cross-sectional electron micrograph of Sample D demonstrating the well-defined and defect-free InAs/InAs0.71Sb0.29 SL region.
(Color online) (a) High-resolution lattice image showing individual InAs and InAs0.71Sb0.29 layers for sample D; (b) Filtered image revealing different interface abruptness between layers, which is attributed to segregation of the Sb surfactant during growth; (c) Line profile average across both InAs-on-InAsSb and InAsSb-on-InAs interfaces, as indicated by blue dashed area boxed above, showing the differences in interface abruptness.
Summary of SL samples reported in this investigation.
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