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Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy
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10.1116/1.3672026
/content/avs/journal/jvstb/30/2/10.1116/1.3672026
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3672026

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic illustration of the InAs/InAs1−xSbx SL structure design for: (a) ordered-alloy and (b) random alloy.

Image of FIG. 2.
FIG. 2.

(Color online) High-resolution XRD (004) ω-2θ profiles and corresponding simulations (offset below each measurement) for Samples A and B,

Image of FIG. 3.
FIG. 3.

Cross-sectional electron micrograph showing entire SL structure of Sample A, and confirming very low defect density.

Image of FIG. 4.
FIG. 4.

Higher-magnification image clearly showing well-ordered In(As)Sb/InAs(Sb) MQW structure within the individual InAs1−xSbx layers of Sample A.

Image of FIG. 5.
FIG. 5.

(a) Low magnification image of Sample B showing typical defective region: (b) Higher-magnification image showing the presence of the In(As)Sb/InAs(Sb) MQW structure apparently only within the first InAs1−xSbx layer.

Image of FIG. 6.
FIG. 6.

Low magnification image of Sample C showing the entire structure.

Image of FIG. 7.
FIG. 7.

Cross-sectional electron micrograph of Sample D demonstrating the well-defined and defect-free InAs/InAs0.71Sb0.29 SL region.

Image of FIG. 8.
FIG. 8.

(Color online) (a) High-resolution lattice image showing individual InAs and InAs0.71Sb0.29 layers for sample D; (b) Filtered image revealing different interface abruptness between layers, which is attributed to segregation of the Sb surfactant during growth; (c) Line profile average across both InAs-on-InAsSb and InAsSb-on-InAs interfaces, as indicated by blue dashed area boxed above, showing the differences in interface abruptness.

Tables

Generic image for table
TABLE I.

Summary of SL samples reported in this investigation.

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/content/avs/journal/jvstb/30/2/10.1116/1.3672026
2011-12-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3672026
10.1116/1.3672026
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