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Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy
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10.1116/1.3676175
/content/avs/journal/jvstb/30/2/10.1116/1.3676175
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3676175
/content/avs/journal/jvstb/30/2/10.1116/1.3676175
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/content/avs/journal/jvstb/30/2/10.1116/1.3676175
2012-01-12
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3676175
10.1116/1.3676175
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