InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
(Color online) (a) XPS spectra of As 3d CL and valence band of InAs film, (b) Al 2p and As 3d CLs at ALD-Al2O3/MBE-Gd2O3/InAs interface, and (c) Al 2p CL and valence band of Al2O3 film.
(Color online) (a) Cross-section view, (b) current density as a function of gate bias, (c) output characteristics, and (d) transfer characteristics of depletion-mode Al2O3/Gd2O3/InAs MOSFET with 12 μm gate length. The inset in (b) shows a FN tunneling through the oxide layer for both forward (+) and reverse (−) biases.
(Color online) MOSCAPs C–V characteristics (with gate area 7.85 × 10−5 cm2) at 300 and 77 K for Al2O3/Gd2O3/InAs and Al2O3/InAs, respectively.
(Color online) (a) Comparisons of the D it distribution vs energy; D-MOSFETs transfer characteristics at 77 K for (b) Al2O3/Gd2O3/InAs and (c) Al2O3/InAs, respectively.
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