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InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
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10.1116/1.3678206
/content/avs/journal/jvstb/30/2/10.1116/1.3678206
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3678206
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) XPS spectra of As 3d CL and valence band of InAs film, (b) Al 2p and As 3d CLs at ALD-Al2O3/MBE-Gd2O3/InAs interface, and (c) Al 2p CL and valence band of Al2O3 film.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Cross-section view, (b) current density as a function of gate bias, (c) output characteristics, and (d) transfer characteristics of depletion-mode Al2O3/Gd2O3/InAs MOSFET with 12 μm gate length. The inset in (b) shows a FN tunneling through the oxide layer for both forward (+) and reverse (−) biases.

Image of FIG. 3.
FIG. 3.

(Color online) MOSCAPs CV characteristics (with gate area 7.85 × 10−5 cm2) at 300 and 77 K for Al2O3/Gd2O3/InAs and Al2O3/InAs, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Comparisons of the D it distribution vs energy; D-MOSFETs transfer characteristics at 77 K for (b) Al2O3/Gd2O3/InAs and (c) Al2O3/InAs, respectively.

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/content/avs/journal/jvstb/30/2/10.1116/1.3678206
2012-02-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3678206
10.1116/1.3678206
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