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Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
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10.1116/1.3678490
/content/avs/journal/jvstb/30/2/10.1116/1.3678490
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3678490
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical I-V characteristics of Ti(30 nm)/Al(200 nm), Ti(Ga)(30 nm)/Ti(30 nm)/Al(200 nm) and Ti(Ga)(30 nm)/TiN(30 nm)/Al(200 nm) contacts on n-GaN before and after annealing at 250 °C. The inset exhibits the total resistances of the samples as a function of annealing time at 300 °C in an oven.

Image of FIG. 2.
FIG. 2.

(Color online) Ga 2p core levels obtained from the contacts/GaN interface regions of (a) Ti/Al, (b) Ti(Ga)/Ti/Al and (c) Ti(Ga)/TiN/Al samples.

Image of FIG. 3.
FIG. 3.

(Color online) SIMS depth profiles obtained from (a) Ti/Al, (b) Ti(Ga)/Ti/Al and (c) Ti(Ga)/TiN/Al samples on the N-face n-GaN before and after annealing at 250 °C for 1 min and 300 °C for 60 min. Solid line denotes as-deposited samples; dashed line represents 250 °C-annealed samples; dotted line indicates 300 °C-annealed samples.

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/content/avs/journal/jvstb/30/2/10.1116/1.3678490
2012-01-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3678490
10.1116/1.3678490
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