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Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
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10.1116/1.3678490
/content/avs/journal/jvstb/30/2/10.1116/1.3678490
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3678490
/content/avs/journal/jvstb/30/2/10.1116/1.3678490
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/content/avs/journal/jvstb/30/2/10.1116/1.3678490
2012-01-24
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3678490
10.1116/1.3678490
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