Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment
Cross-sectional structure of AlGaN/GaN HEMTs with CHF3 and CF4 treatment beneath gate metal.
(Color online) (a) Atomic force microcopy (AFM) image and (b) the Al 2 p core levels XPS spectra of AlGaN/GaN surface with CHF3 and CF4 treatments.
Hydrogen and fluorine ions concentration distribution profiles in AlGaN/GaN samples for both devices.
Capacitance-voltage curves and hysteresis voltage shift measured at 1 MHz on CHF3 and CF4 treated devices.
Transistor (a) IG-VGD characteristics, (b) IDS -VDS characteristics, and (c) gm-VGSand IDS-VGS characteristics for both devices.
(Color online) Flicker noise spectra characteristics with (a) CHF3 and (b) CF4 treatments for both devices.
(Color online) Hooge’s parameter (α H ) performance with (a) CHF3 and (b) CF4 treatments for both devices.
Power gain and output power performance for both devices at 2.4 GHz operation.
Nonlinear term comparisons of CHF3 and CF4 treated devices.
dc and microwave characteristic comparisons for both devices.
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