1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment
Rent:
Rent this article for
USD
10.1116/1.3680115
/content/avs/journal/jvstb/30/2/10.1116/1.3680115
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3680115

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional structure of AlGaN/GaN HEMTs with CHF3 and CF4 treatment beneath gate metal.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Atomic force microcopy (AFM) image and (b) the Al 2 p core levels XPS spectra of AlGaN/GaN surface with CHF3 and CF4 treatments.

Image of FIG. 3.
FIG. 3.

Hydrogen and fluorine ions concentration distribution profiles in AlGaN/GaN samples for both devices.

Image of FIG. 4.
FIG. 4.

Capacitance-voltage curves and hysteresis voltage shift measured at 1 MHz on CHF3 and CF4 treated devices.

Image of FIG. 5.
FIG. 5.

Transistor (a) IG-VGD characteristics, (b) IDS -VDS characteristics, and (c) gm-VGSand IDS-VGS characteristics for both devices.

Image of FIG. 6.
FIG. 6.

(Color online) Flicker noise spectra characteristics with (a) CHF3 and (b) CF4 treatments for both devices.

Image of FIG. 7.
FIG. 7.

(Color online) Hooge’s parameter (α H ) performance with (a) CHF3 and (b) CF4 treatments for both devices.

Image of FIG. 8.
FIG. 8.

Power gain and output power performance for both devices at 2.4 GHz operation.

Tables

Generic image for table
TABLE I.

Nonlinear term comparisons of CHF3 and CF4 treated devices.

Generic image for table
TABLE II.

dc and microwave characteristic comparisons for both devices.

Loading

Article metrics loading...

/content/avs/journal/jvstb/30/2/10.1116/1.3680115
2012-02-01
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3680115
10.1116/1.3680115
SEARCH_EXPAND_ITEM