Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxy
(Color online) Ga and P induced RHEED intensity oscillation. The time series on top show the status of Ga and P shutters, where 0 stands for closed and 1 stands for open. The oscillation with larger frequency before the P shutter open is due to shutter gas leak.
(Color online) As and P induced RHEED intensity oscillation. The time series on top show the status of Ga, As, and P shutters, where 0 stands for closed and 1 stands for open. The oscillation with larger frequency before the As and P shutters open is due to shutter gas leak.
(Color online) Comparison of between As content from in situ RHEED monitoring and that from XRD. The linear fit with 0 intercept and almost unity slope shows a good agreement between the two methods and Eq. (1) is valid under the condition that As flux is smaller than Ga flux at substrate temperature no higher than 530 °C.
(Color online) Asymmetric (224) reciprocal space maps along  and  directions and symmetrical (004) reciprocal space map. The black lines in asymmetric map are 100% relaxation lines and the one in symmetric map is the line scan profile line used to compare to computer simulations.
(Color online) 25 μm full scale AFM scan. The corrugations along both along  and  directions form the typical cross-hatch patterns that indicate biaxial relaxation.
(Color online) Temperature dependent PL (300, 133, 77, 12 K). GaNAsP has PL signal at 300 K while the GaAsP layer below it has signal only at temperature lower than some temperature between 133 and 77 K. Energy maxima of GaNAsP show S-shape characteristic.
(Color online) PL performance after RTA. For this GaN0.023As0.56P0.417, the optimal RTA temperature is around 950 °C. Band tail due to N induced defects is significantly reduced.
(Color online) Relative PL intensity improvement vs RTA temperature for two samples: GaN0.023As0.56P0.417 and GaN0.03As0.56P0.41.
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