MBE growth and characterization of Mn-doped InN
(Color online) Effect of growth conditions on Mn incorporation in InN. Note that the SIMS detection limit is approximately 7 × 1016 cm−3.
Scanning electron microscope images of (a) undoped and (b) 1.6 × 1017 cm−3 Mn doped InN.
(Color online) (a) Magnetic field dependence of the conductivity tensor components recorded up to 9 T for an InN:Mn film grown with Mn concentration of 1.6 × 1017 cm−3 under N-rich conditions. 1 e denotes one electron and 1 h denotes one hole. (b) The QMSA spectrum of the same film, indicating the presence of bulk electrons, light holes, and surface/interface electrons. Note that the fits also include a residual conductivity, as using just one (electron) carrier results in an extremely poor fit.
(Color online) 5 K photoluminescence of InN doped with different concentrations of Mn. (a) Films grown under N-rich conditions, and (b) films grown under In-rich conditions. The indicated Mn concentrations were obtained from SIMS measurements.
Surface Fermi energy relative to the top of the valence band, as determined from x ray photoemission spectroscopy, as a function of Mn concentration.
(Color online) Temperature dependent PL of the 1.6 × 1017 cm−3 Mn doped film grown under N-rich conditions.
(Color online) Power dependent PL of the 1.6 × 1017 cm−3 Mn doped film grown under N-rich conditions.
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