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MBE growth and characterization of Mn-doped InN
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10.1116/1.3687903
/content/avs/journal/jvstb/30/2/10.1116/1.3687903
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3687903
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Effect of growth conditions on Mn incorporation in InN. Note that the SIMS detection limit is approximately 7 × 1016 cm−3.

Image of FIG. 2.
FIG. 2.

Scanning electron microscope images of (a) undoped and (b) 1.6 × 1017 cm−3 Mn doped InN.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Magnetic field dependence of the conductivity tensor components recorded up to 9 T for an InN:Mn film grown with Mn concentration of 1.6 × 1017 cm−3 under N-rich conditions. 1 e denotes one electron and 1 h denotes one hole. (b) The QMSA spectrum of the same film, indicating the presence of bulk electrons, light holes, and surface/interface electrons. Note that the fits also include a residual conductivity, as using just one (electron) carrier results in an extremely poor fit.

Image of FIG. 4.
FIG. 4.

(Color online) 5 K photoluminescence of InN doped with different concentrations of Mn. (a) Films grown under N-rich conditions, and (b) films grown under In-rich conditions. The indicated Mn concentrations were obtained from SIMS measurements.

Image of FIG. 5.
FIG. 5.

Surface Fermi energy relative to the top of the valence band, as determined from x ray photoemission spectroscopy, as a function of Mn concentration.

Image of FIG. 6.
FIG. 6.

(Color online) Temperature dependent PL of the 1.6 × 1017 cm−3 Mn doped film grown under N-rich conditions.

Image of FIG. 7.
FIG. 7.

(Color online) Power dependent PL of the 1.6 × 1017 cm−3 Mn doped film grown under N-rich conditions.

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/content/avs/journal/jvstb/30/2/10.1116/1.3687903
2012-02-23
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: MBE growth and characterization of Mn-doped InN
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3687903
10.1116/1.3687903
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