(Color online) Concentration profiles calculated from 1 MHz C-V measurements at 300 K (open circles, blue line) and 85 K (solid squares, red line) for the high resistivity bulk HVPE GaN.
(a) DLTS spectrum measured on high resistivity GaN; (b) DLTS spectrum of standard conducting GaN; reverse bias −1 V, forward bias pulse of +1 V (2-s-long), time windows 500 ms/5000 ms.
(Color online) (a) ODLTS spectrum of standard conducting GaN; (b) high resistivity GaN; reverse bias −1 V, excitation with a high-power GaN light emitting diode (LED) with the peak wavelength of 365 nm (5-s-long); time windows 100 ms/1000 ms (solid curves, red) and 2.5 s/50 s (dashed curve, blue).
(a) Photocapacitance spectrum for high resistivity GaN; (b) and for standard conducting GaN; measurements done at 300 K, reverse bias of −1 V, with a set of high power LEDs with equal power rating of 3 W and different peak wavelengths.
(Color online) Calibration amplitude spectra measured with a Si p-i-n detector for the 239Pu ampoule α-particles source and the 148Gd-244 Cm (15:1) α-particle source.
(Color online) Amplitude spectra measured on the high resistivity GaN detector at different voltages for 239Pu α-particles of 5.157 MeV; voltages: 40 V (solid triangles, magenta line), 60 V (open circles, blue line), 80 V (solid circles, green line), 100 V (open squares, red line), 120 V (solid squares, black line).
(Color online) Dependence of CCE of the high-resistivity GaN detector on applied reverse bias for the 239Pu (open squares, black line) and 148Gd (closed squares, red line) α-particle sources.
Reverse voltage I-V characteristic of the high resistivity GaN detector.
Electrical characteristics of the bulk HVPE GaN.
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