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Characterization of carbon nanotube film-silicon Schottky barrier photodetectors
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10.1116/1.3690645
/content/avs/journal/jvstb/30/2/10.1116/1.3690645
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3690645
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic of the CNT film-Si Schottky barrier device showing both the top and cross-sectional views. The CNT film is ∼50 nm thick, 400 nm SiO2 is thermally grown on Si, and the metal contact ring is Cr/Pd (10/90 nm). (b) AFM image of a ∼50 nm thick CNT film on SiO2. (c) The photoresponse and noise measurement setup and circuit diagram.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dark I-V characteristics of a CNT film-Si device with a contact area of 500 × 500 μm2 in the bias range from −3 to 3 V at room temperature. (b) Current of the CNT film-Si device as a function of reverse bias voltage in the dark and under λ = 633 nm He–Ne laser illumination. (c) Seven cycles of the photocurrent response when the device is reverse biased at 1 V and is illuminated by a monochromator with a chopped tungsten bromine light source. The output wavelength of the monochromator is selected at 633 nm with a power density of 65 μW/cm2. The chopper frequency is selected to be ∼12 Hz.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Zoom-in of a single response cycle of the CNT film-Si photodetector from Fig. 2(c). (b) Spectral responsivity of CNT film-Si and Ti/Au-Si metal control devices (at a reverse bias of 1 V) for several wavelengths in the visible and near infrared regions. The solid lines are a guide for the eye and the dotted lines indicate various external quantum efficiency (QE) values.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Current noise spectral density of the CNT film-Si device measured at five different reverse biases ranging from 0.46 to 2.85 V, showing that the noise is 1/f limited. (b) Comparison of the current noise spectral density at 10 Hz for the CNT film-Si and Ti/Au–Si metal control devices as a function of reverse bias current. The dashed lines show the power-law fits, where the extracted exponents are 1.75 and 1.80 for the CNT film and metal control devices, respectively.

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/content/avs/journal/jvstb/30/2/10.1116/1.3690645
2012-03-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of carbon nanotube film-silicon Schottky barrier photodetectors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/2/10.1116/1.3690645
10.1116/1.3690645
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