Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiN x top-gate insulators
(Color online) Fabrication processes for complementary voltage inverters based on CNTFETs: (a) SiN x film deposition on one CNTFET, (b) annealing in N2 atmosphere, (c) SiN x film deposition on the other CNTFET, (d) formation of top gates on the CNTFETs, and (e) optical image of the device.
(Color online) Transfer characteristics in the (a) n-type and (b) p-type CNTFETs shown in Fig. 1(e).
(Color online) (a) Static transfer characteristics and (b) gain for the CNTFET-based complementary voltage inverter.
(Color online) Noise margin characteristics in the CNTFET-based complementary voltage inverter. V OH, V LH, V IL, and V OL were defined as points on the transfer curves where the slope was equal to −1.
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