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Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiN x top-gate insulators
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10.1116/1.3697527
/content/avs/journal/jvstb/30/3/10.1116/1.3697527
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.3697527
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Fabrication processes for complementary voltage inverters based on CNTFETs: (a) SiN x film deposition on one CNTFET, (b) annealing in N2 atmosphere, (c) SiN x film deposition on the other CNTFET, (d) formation of top gates on the CNTFETs, and (e) optical image of the device.

Image of FIG. 2.
FIG. 2.

(Color online) Transfer characteristics in the (a) n-type and (b) p-type CNTFETs shown in Fig. 1(e).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Static transfer characteristics and (b) gain for the CNTFET-based complementary voltage inverter.

Image of FIG. 4.
FIG. 4.

(Color online) Noise margin characteristics in the CNTFET-based complementary voltage inverter. V OH, V LH, V IL, and V OL were defined as points on the transfer curves where the slope was equal to −1.

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/content/avs/journal/jvstb/30/3/10.1116/1.3697527
2012-03-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.3697527
10.1116/1.3697527
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