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Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
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10.1116/1.3698402
/content/avs/journal/jvstb/30/3/10.1116/1.3698402
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.3698402

Figures

Image of FIG. 1.
FIG. 1.

Optical micrograph of InAlN/GaN HEMT device layout.

Image of FIG. 2.
FIG. 2.

(Color online) Gate I-V characteristics before and after proton irradiation with different doses.

Image of FIG. 3.
FIG. 3.

(Color online) Drain I-V characteristics before and after proton irradiation with different doses. The gate voltage was stepped from 0 V in − 1 V steps.

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics before and after proton irradiation with different doses. The drain-source voltage was 5 V.

Image of FIG. 5.
FIG. 5.

(Color online) Subthreshold drain I-V curves after proton irradiation with different doses. The drain-source voltage was 5 V.

Image of FIG. 6.
FIG. 6.

(a) SEM Image indicating where the EBIC measurements were taken. (b) SEM images with EBIC signal vs distance.

Image of FIG. 7.
FIG. 7.

(Color online) EBIC signal (V) vs distance (μm) for the reference and three irradiated samples off set for clarity.

Tables

Generic image for table
TABLE I.

Summary of ideality factor and Schottky barrier height of InAlN/GaN HEMTs before and after proton irradiations with different proton doses.

Generic image for table
TABLE II.

Summary of subthreshold slope, ON/OFF ratio, sheet and transfer resistance and minority carrier diffusion length of InAlN/GaN HEMTs before and after proton irradiations with different proton doses.

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/content/avs/journal/jvstb/30/3/10.1116/1.3698402
2012-03-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.3698402
10.1116/1.3698402
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