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Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
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10.1116/1.3698402
/content/avs/journal/jvstb/30/3/10.1116/1.3698402
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.3698402
/content/avs/journal/jvstb/30/3/10.1116/1.3698402
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/content/avs/journal/jvstb/30/3/10.1116/1.3698402
2012-03-27
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.3698402
10.1116/1.3698402
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