Synthesis of patterned nanographene on insulators from focused ion beam induced deposition of carbon
(Color online) Schematic illustration of the two-step process for the site-controlled synthesis of nanographene on SiO2: (i) FIBID of amorphous C (step 2) and (ii) Ni foil-assisted annealing at mid-high temperature in vacuum (step 3).
(Color online) (a) Raman spectra of 25 nm (top), 50 nm (middle), and 100 nm (bottom) thick C features after annealing at 1000 °C for 30 min. SiO2 thickness is 100 nm. Insets are optical microscope images of the patterned areas. (b) AFM image information shows the surface morphology and thickness-controlled patterns after metal-assisted annealing, corresponding to the Raman spectra sites.
(Color online) Partial-area Raman intensity mapping (red colored areas) of the G-mode at 1587 cm−1 (left) and the 2D-mode at 2693 cm−1 (right) for a 20 nm thick C deposit (40 × 40 μm2, seen as a darker area), after annealing at 1000 °C for 30 min. SiO2 is 500 nm thick.
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