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Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties
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10.1116/1.4710519
/content/avs/journal/jvstb/30/3/10.1116/1.4710519
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.4710519
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Growth rate of atomic layer deposited ZnO and Al2O3 as a function of substrate temperature.

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD data for undoped ZnO and Al:ZnO films with 1–8 at. % Al at a growth temperature of 100 °C. (b) XRD data for 3 at. % Al:ZnO films with various growth temperatures in the range from 60 to 250 °C.

Image of FIG. 3.
FIG. 3.

Plane view TEM images for 3 at. % Al:ZnO thin films deposited at (a) 60 °C (b) 100 °C, and (c) 250 °C.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Carrier concentration and (b) Hall mobility data as a function of Al concentration for various growth temperatures.

Image of FIG. 5.
FIG. 5.

(Color online) Carrier concentrations and 1/kT data for various Al concentrations.

Image of FIG. 6.
FIG. 6.

Schematic diagram of Al:ZnO TFT on Si substrate with ITO source/drain.

Image of FIG. 7.
FIG. 7.

(Color online) Transfer curves of (Al:ZnO TFTs) for (a) deposited at 100 °C with various Al concentrations and deposited Al:ZnO active layer and (b) various deposition temperatures at 1 at. % Al:ZnO active layer.

Image of FIG. 8.
FIG. 8.

(Color online) (a) Transfer curves of 3 at. % Al:ZnO and (b) ΔV th data of ZnO and 3 at. % Al:ZnO deposited at 100 °C under 10 V positive gate stress.

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/content/avs/journal/jvstb/30/3/10.1116/1.4710519
2012-04-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.4710519
10.1116/1.4710519
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