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Novel surface chemical synthesis route for large area graphene-on-insulator films
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10.1116/1.4710997
/content/avs/journal/jvstb/30/3/10.1116/1.4710997
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.4710997
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Figures

Image of FIG. 1.
FIG. 1.

Si 2s and C 1s XPS peaks for the 6H-SiC (0001) surface (a) after an HF dip to remove the native oxide and (b) after CF4-based ICP-RIE and annealing at 970 °C.

Image of FIG. 2.
FIG. 2.

(Color online) C 1s XPS peak for 6H-SiC (0001) surface after (a) CF4- and (b) C12-based ICP-RIE and annealing at 970 °C. The inset shows the F, CF, and CC (not labeled) defects associated with the two highest binding energy peaks.

Image of FIG. 3.
FIG. 3.

(Color online) (a) RHEED patterns obtained along the azimuth before (lower) and after (upper) CF4-based ICP-RIE and annealing at 970 °C. (b) The D and G Raman spectral region for (i) before and (ii) after CF4-based ICP-RIE and annealing at 970 °C. (c) The corresponding 2D spectral region.

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/content/avs/journal/jvstb/30/3/10.1116/1.4710997
2012-05-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Novel surface chemical synthesis route for large area graphene-on-insulator films
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/3/10.1116/1.4710997
10.1116/1.4710997
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