(a) Scanning electron microscopy (SEM) image of Co3O4 nanowires grown on silicon substrate. (b) MnO2 nanowires drop-casted and dried onto silicon substrate.
(a) SEM image of Co3O4 flower-like nanostructures grown on silicon substrate. (b) MnO2 urchin-like nanostructures drop-casted and dried onto silicon substrate.
Raman spectra comparing pristine MnO2 and Co3O4 to a Co3O4/MnO2 nanostructure composite. A sharp sign (#) denotes the characteristic MnO2 components. The composite has a MnO2 loading on its surface of ∼2% by weight.
(a) Cyclic voltammogram of pristine Co3O4 at 50 and 100 mV/s scan rate respectively in 1 M KOH (Ag/AgCl reference electrode). (b) Cyclic voltammogram of Co3O4/MnO2 nanostructure composite at 100 mV/s scan rate in 1 M KOH with (Ag/AgCl reference electrode).
(a) SEM image of graphene oxide from exfoliated GO obtained from modified Hummer’s method and drop-casted onto silicon substrate. (b) Reduced graphene oxide film electrophoretically deposited onto a stainless steel (SS 316) substrate, followed by chemical reduction using NaBH4.
(a) Raman spectra of GO and rGO deposited on conductive substrate, showing the relative ratio of D- to G-band change from 0.7 to 2.6. (b) FTIR spectra show higher intensity band of C–O stretch at 1100 cm−1 in rGO.
Cyclic voltammogram of graphene at scan rate of 100, 200, and 500 mV/s in 1 M KOH with (Ag/AgCl reference electrode), the measured specific capacitance for a scan rate of 100 mV/s is 117 F/g.
SEM image of close interfacial interactions between self-assembled monolayer of MnO2 and graphene oxide film, (a) low magnification, (b) high magnification.
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