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In situ thickness and temperature measurements of CdTe grown by molecular beam epitaxy on GaAs substrate
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic of BandiT system, which is mounted with a beveled window to avoid mirror reflection.

Image of FIG. 2.
FIG. 2.

Result of temperature calibration. The lower temperature is determined by the melting temperature of indium (156 °C) and higher temperatures are determined by the IR optical pyrometer, which is effective for high-temperature measurement.

Image of FIG. 3.
FIG. 3.

(Color online) Diffuse reflectance spectrum of a GaAs substrate (a) without a CdTe film and (b) with a 7.02 μm CdTe film.

Image of FIG. 4.
FIG. 4.

(Color online) Temperature oscillation and the theoretical simulation of oscillation at the real temperature of 270 °C. It is worth noting that the real temperature is not the mean value of the oscillation.

Image of FIG. 5.
FIG. 5.

Illustration of the diffuse reflection spectrum. The spectrum is divided into three parts according to the optical character. The band edge wavelength is defined by the tangents of the curve.

Image of FIG. 6.
FIG. 6.

Thickness measured by Fourier transform infrared spectroscopy. The two measurements are consistent with each other.

Image of FIG. 7.
FIG. 7.

(Color online) Temperature varies with the thickness interference effect on the band edge. It varies 15 °C (6 nm in band edge wavelength), whereas the thickness changes from 6.05 to 6.10 μm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ thickness and temperature measurements of CdTe grown by molecular beam epitaxy on GaAs substrate