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Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs
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10.1116/1.4721276
/content/avs/journal/jvstb/30/4/10.1116/1.4721276
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/4/10.1116/1.4721276
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 core level spectra from a decapped InGaAs sample, following exposure to the ALD reactor chamber, and then after subsequent half-cycle ALD precursor exposures up to 1 nm of Al2O3. An extra feature is introduced in the In spectra to fit the asymmetry of the In line shape. See the text.

Image of FIG. 2.
FIG. 2.

(Color online) O 1s core level spectra from a decapped InGaAs sample following exposure to the ALD reactor chamber, and then after subsequent half-cycle ALD precursor exposures up to 1 nm of Al2O3.

Image of FIG. 3.
FIG. 3.

(Color online) Ratio of the fitted core level oxide to bulk peak components from the Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 spectra.

Image of FIG. 4.
FIG. 4.

(Color online) Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 core level spectra from a decapped InGaAs sample and following subsequent 1 nm deposition of Al metal and half-cycle ALD of 1 nm of Al2O3.

Image of FIG. 5.
FIG. 5.

(a). (Color online) Al 2p core level spectra from a decapped InGaAs sample and following subsequent 1 nm deposition of Al metal and half-cycle ALD of 1 nm of Al2O3 and (b) the ratio of the fitted oxide to bulk peak components from the Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 spectra.

Image of FIG. 6.
FIG. 6.

(Color online) Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 core level spectra from a decapped InGaAs sample and after subsequent ex situ NH4OH treatment, 1 nm of Al deposition half-cycle up to 1 nm of ALD Al2O3.

Image of FIG. 7.
FIG. 7.

(a). (Color online) O 1s and (b) Al 2p core level spectra from a decapped InGaAs sample and after subsequent ex situ NH4OH treatment, 1 nm of Al deposition and 1 nm of ALD Al2O3. (c) Ratio of the fitted oxide to bulk peak components from the corresponding Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 spectra.

Image of FIG. 8.
FIG. 8.

(Color online) Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 core level spectra from a decapped InGaAs sample, after 1 nm of La metal deposition and first half-cycle of TMA.

Image of FIG. 9.
FIG. 9.

(a) (Color online) La 3d core level spectra after La deposition on a decapped InGaAs sample, subsequent exposure to the ALD reactor at 300 °C, and first cycle of TMA. (b) Corresponding O 1s spectra, including the spectra after 1 nm of Al2O3 deposition. (c) Ratio of the fitted oxide components to the bulk peak from the Ga 2p 3/2, As 2p 3/2, and In 3d 5/2 spectra. (d) Al 2p spectra.

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/content/avs/journal/jvstb/30/4/10.1116/1.4721276
2012-05-25
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/4/10.1116/1.4721276
10.1116/1.4721276
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