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Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors
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10.1116/1.4729285
/content/avs/journal/jvstb/30/4/10.1116/1.4729285
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/4/10.1116/1.4729285

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic cross-sectional diagram of the InAlN/GaN HEMT structure.

Image of FIG. 2.
FIG. 2.

Percentage increases of the sheet resistance, contact resistivity, and transfer resistance after the proton irradiations at different energies.

Image of FIG. 3.
FIG. 3.

(Color online) Gate I-V characteristics of InAlN/GaN HEMTs before and after proton irradiation with a dose of 5 × 1015 protons/cm2 and an energy at 5, 10, or 15 MeV.

Image of FIG. 4.
FIG. 4.

(Color online) Drain I-V characteristics of InAlN/GaN HEMTs before and after proton irradiation with a dose of 5 × 1015 protons/cm2 and an energy at 5, 10, or 15 MeV.

Image of FIG. 5.
FIG. 5.

(Color online) Carrier removal rate as a function of the proton irradiation energy.

Image of FIG. 6.
FIG. 6.

(Color online) (a) DC transfer characteristics for pre- and post-proton irradiated InAlN/GaN HEMTs, and (b) extracted threshold voltage as a function of the irradiation energy.

Image of FIG. 7.
FIG. 7.

(Color online) Drain sub-threshold characteristics and gate currents for pre- and post-proton irradiated InAlN/GaN HEMT devices.

Image of FIG. 8.
FIG. 8.

(Color online) (a) The current gain h 21 and (b) Mason’s unilateral power gain U curves for the InAlN/GaN HEMT devices irradiated with each different proton energy.

Tables

Generic image for table
TABLE I.

Sheet, contact, and transfer resistances before and after 5, 10, and 15 MeV proton irradiations with a dose of 5 × 1015 cm−2.

Generic image for table
TABLE II.

Summary of reverse-bias gate leakage current, ideality factor, and Schottky barrier height of InAlN/GaN HEMTs before and after 5, 10, and 15 MeV proton irradiations with a dose of 5 × 1015 cm−2.

Generic image for table
TABLE III.

Mobility, carrier concentration, carrier removal rate, contact, and transfer resistances before and after 5, 10, or 15 MeV proton irradiations with a dose of 5 × 1015 cm−2.

Generic image for table
TABLE IV.

Summary of sub-threshold drain leakage current, sub-threshold slope, and on/off ratio of InAlN/GaN HEMTs prior to and after 5, 10, and 15 MeV proton irradiations with 5 × 1015 cm−2 proton dose.

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/content/avs/journal/jvstb/30/4/10.1116/1.4729285
2012-06-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/4/10.1116/1.4729285
10.1116/1.4729285
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