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Metastable centers in AlGaN/AlN/GaN heterostructures
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10.1116/1.4731256
/content/avs/journal/jvstb/30/4/10.1116/1.4731256
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/4/10.1116/1.4731256
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

300 K C-V characteristics of AlGaN/AlN/GaN HEMT structures; Al compositions are marked near each experimental curve, solid lines are obtained for voltage sweep directions from positive to negative voltages, and dashed curves are for the opposite sweep direction.

Image of FIG. 2.
FIG. 2.

Simulated 300 K C-V characteristics for the same heterostructures.

Image of FIG. 3.
FIG. 3.

85 K C-V characteristics measured for the 30% Al sample after cooling in the dark at 0 V (solid line, black), −3.7 V (dashed line, blue), −4.1 V (dashed-dotted line, cyan), C-V characteristic measured after cooling in the dark at −4.1 V, illumination with high-power 365 nm LED and wait of 5 min (PPC curve, dashed-dotted-dotted line, red), and after application of +3 V forward bias (PPC +3 V curve, short dashed line, magenta) (the two latter curves are indistinguishable).

Image of FIG. 4.
FIG. 4.

3.85 K C-V characteristics measured for the 50% Al sample after cooling in the dark at 0 V (solid line, black), −2.5 V (dashed-dotted line, red), −4.1 V (short dashed line, blue), C-V characteristic measured after cooling in the dark at −4.1 V, illumination with high-power 365 nm LED and wait of 5 min (PPC curve, dashed-dotted-dotted line, navy blue), and after application of +3 V forward bias (PPC +3 V curve, short dashed-dotted line, cyan).

Image of FIG. 5.
FIG. 5.

Dark C-T and G/ω-T curves measured for the 40% Al sample at 1 kHz at −5.4 V (dashed line, red), −5.6 V (dashed-dotted line, magenta), −6.1 V (dashed-dotted-dotted line, black) PPC curves measured after illumination with 365 nm LED and respective dark characteristics shown in solid lines of the same color.

Image of FIG. 6.
FIG. 6.

Composition dependence of the concentration of the PPC centers calculated from the voltage shift of the low temperature C-V characteristics after illumination with a 365 nm LED.

Image of FIG. 7.
FIG. 7.

Spectral dependence of the voltage shift of low temperature C-V characteristics after illumination at 85 K of the 30% (solid squares, black), 40% (open squares, red), and 50% Al (open triangles, blue) samples.

Image of FIG. 8.
FIG. 8.

RDLTS spectra of the 30% (solid line, black), 40% (dashed-dotted line, red), and 50% Al (dashed line, blue) samples; in all cases the spectra were measured with time windows 200 ms/2000 ms, “injection” pulse length 2000 ms; voltage was pulsed from −3.6 V to −4.2 V (30%), −5.3 V to −6 V (40%), −2 V to −3 V (50%).

Image of FIG. 9.
FIG. 9.

Reciprocal space HRXRD map around the (10–14) reflection for the 50% Al sample.

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/content/avs/journal/jvstb/30/4/10.1116/1.4731256
2012-07-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metastable centers in AlGaN/AlN/GaN heterostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/30/4/10.1116/1.4731256
10.1116/1.4731256
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