(Color online) (a) Schematic graph of the Si-based nanostructure fabrication process. (b) The optical images of a blank silicon wafer and etched silicon samples (sample of NS-A, NS-B, and NS-C). (c) Schematic of the proposed Si nanostructure-textured solar cell.
Top-view SEM images of the forming process of AgNPs via RTA. The initial thickness of the film is 20 nm, and RTA at (a) 600 °C for 2 min; (b)600 °C for 5 min; (c) 600 °C for 20 min; (d) 700 °C for 2 min; (e) 700 °C for 5 min; (f) 700 °C for 20 min.
SEM images of the annealed Ag films (top-view) and correspondingly formed nanostructures (cross-sectional view) with initial thicknesses of (a) and (d): 3 nm; (b) and (e): 5 nm; (c) and (f): 10 nm.
(a) Cross-sectional SEM image of nanostructures formed by Ag-catalyzed etching; (b) zoom-in image of black frame in (a).
(Color online) (a) Comparison of optical reflections of the Si nanostructure-textured cells (NS-A, NS-B, and NS-C) and the blank wafer; (b) the I–V curves of the cells under standard test conditions (AM 1.5 irradiation, T = 300 K and P = 100 mW/cm2).
(Color online) (a) EQE of nanostructure-textured cells (NS-A, NS-B, and NS-C) and planar cell; (b) the IQE of nanostructure-textured cells (NS-A, NS-B, and NS-C) and planar cell.
Article metrics loading...
Full text loading...