SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors
(Color online) (a) Image of the AlGaN/GaN HEMT sensor chip mounted on a carrier with Au-wire bonding and (b) enlarged image of SnO2 functionalized active area on the HEMT sensor.
(Color online) HRTEM image of SnO2 films annealed at (a) 200 °C and (b) 400 °C, and SADP of SnO2 films annealed at (c) 200 °C and (d) 400 °C.
(Color online) XRD patterns of tin oxide films on glass substrates annealed at different temperatures (a) 200 °C, (b) 300 °C, (c) 400 °C, and (d) 500 °C.
(Color online) Plot of average grain size (D) vs annealing time (t) for the SnO2 films annealed at 400 °C.
(Color online) Arrhenius plot of ln(D 2.2) vs 1000/T for the annealed SnO2 films.
(a) Drain currents of the SnO2 functionalized AlGaN/GaN HEMT sensors exposed to different O2 concentrations measured at 100 °C. 0.5 V was applied at the drain electrode. (b) Delta drain current of the HEMT sensor at various oxygen concentrations.
(Color online) Schematic of the SnO2 gated AlGaN/GaN HEMT sensor.
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