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SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Image of the AlGaN/GaN HEMT sensor chip mounted on a carrier with Au-wire bonding and (b) enlarged image of SnO2 functionalized active area on the HEMT sensor.

Image of FIG. 2.
FIG. 2.

(Color online) HRTEM image of SnO2 films annealed at (a) 200 °C and (b) 400 °C, and SADP of SnO2 films annealed at (c) 200 °C and (d) 400 °C.

Image of FIG. 3.
FIG. 3.

(Color online) XRD patterns of tin oxide films on glass substrates annealed at different temperatures (a) 200 °C, (b) 300 °C, (c) 400 °C, and (d) 500 °C.

Image of FIG. 4.
FIG. 4.

(Color online) Plot of average grain size (D) vs annealing time (t) for the SnO2 films annealed at 400 °C.

Image of FIG. 5.
FIG. 5.

(Color online) Arrhenius plot of ln(D 2.2) vs 1000/T for the annealed SnO2 films.

Image of FIG. 6.
FIG. 6.

(a) Drain currents of the SnO2 functionalized AlGaN/GaN HEMT sensors exposed to different O2 concentrations measured at 100 °C. 0.5 V was applied at the drain electrode. (b) Delta drain current of the HEMT sensor at various oxygen concentrations.

Image of FIG. 7.
FIG. 7.

(Color online) Schematic of the SnO2 gated AlGaN/GaN HEMT sensor.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors